Vice-Chairman Bai Lichen of the CPPCC National Committee, Under-Secretary-General of the CPPCC National Committee, the General Office of the CPPCC National Committee and party secretary Yang Chonghui, Mr Lau Yuk-secretary of the Shenzhen Municipal Committee, Mayor Xu Zongheng, attended the ceremony.
It is reported that the plant occupies an area of 12,000 square meters, of which 1000,100,10 class clean room with up to 7000 square meters, which will form a “comprehensive group III-V compounds chip factory”, and the development of 0.5-50GHz ,0.3-1um GaAs HFET, GaAs PHEMT, GaN HEMT ,1-3 um InGaP HBT, laser and PIN (detector) diodes, light emitting diodes and high-class aerospace solar cell conversion rate of chip production.
“Epitaxial films with the chip, both of the upper reaches of the industrial chain. This is the significance of a breakthrough.” Photoelectron well-known experts, Chinese Academy of Engineering and Niu Hanben former national director of the Office of the revitalization of the e-National Development Bank of science and technology consultant Ping Wu Tang Said excitedly.
“In the past, we in the optoelectronics | laser device industry, only branches, leaves, roots and not, the trunk. Now we finally have the roots, trunk. Not only to fill the gaps in the history of our country, but also from industrial photoelectrons China can open branches hp f4809a battery San vigorous development of the leaf. ”
It is understood that the Ministry of Science and Technology in April 2005 formally approved the construction of Shenzhen, “National Semiconductor Lighting Project Industrialization Base.” Crystal century and the source of the core area of the industry’s investment in the first phase of 12,890,000,000 yuan, a comprehensive industrial base is expected to be RMB direct 100,000,000,000 yuan in output value over and pull an annual output value of related industries for more than 400,000,000,000 yuan.
